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STD155N3H6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD155N3H6 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 18 page May 2011 Doc ID 018793 Rev 2 1/ 18 STB155N3H6 STD155N3H6 N-channel 30 V, 2.5 m Ω , 80 A, D²PAK, DPAK STripFET™ VI DeepGATE™ Power MOSFET Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness Application ■ Switching applications ■ Automotive Description These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram Order codes VDSS RDS(on) max ID STB155N3H6 30 V < 3 m Ω 80 A (1) 1. Limited by wire bonding STD155N3H6 30 V < 3 m Ω 80 A (1) DPAK 1 3 1 3 D²PAK AM01474v1 D (TAB or 2) G(1) S(3) Table 1. Device summary Order codes Marking Package Packaging STB155N3H6 155N3H6 D²PAK Tape and reel STD155N3H6 DPAK www.st.com |
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