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IRF7663TR Datasheet(PDF) 1 Page - International Rectifier

No. de pieza IRF7663TR
Descripción Electrónicos  Trench Technology
Download  7 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF7663TR Datasheet(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
VDS
Drain- Source Voltage
-20
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-8.2
ID @ TA= 70°C
Continuous Drain Current, VGS @ -4.5V
-6.6
A
IDM
Pulsed Drain Current

-66
PD @TA = 25°C
Power Dissipation
1.8
PD @TA = 70°C
Power Dissipation
1.15
Linear Derating Factor
10
mW/°C
EAS
Single Pulse Avalanche Energy
„
115
mJ
VGS
Gate-to-Source Voltage
± 12
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
5 /25/00
HEXFET® Power MOSFET
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
70
°C/W
Thermal Resistance
VDSS = -20V
RDS(on) = 0.020Ω
Description
Absolute Maximum Ratings
W
www.irf.com
1
T op V ie w
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
IRF7663
q
Trench Technology
q
Ultra Low On-Resistance
q
P-Channel MOSFET
q
Very Small SOIC Package
q
Low Profile (<1.1mm)
q
Available in Tape & Reel
New trench HEXFET® power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8
™ package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
MICRO8
PD-91866B


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