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IRF7663TR Datasheet(PDF) 1 Page - International Rectifier |
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IRF7663TR Datasheet(HTML) 1 Page - International Rectifier |
1 / 7 page Parameter Max. Units VDS Drain- Source Voltage -20 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -8.2 ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -6.6 A IDM Pulsed Drain Current -66 PD @TA = 25°C Power Dissipation 1.8 PD @TA = 70°C Power Dissipation 1.15 Linear Derating Factor 10 mW/°C EAS Single Pulse Avalanche Energy 115 mJ VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C 5 /25/00 HEXFET® Power MOSFET Parameter Max. Units RθJA Maximum Junction-to-Ambient 70 °C/W Thermal Resistance VDSS = -20V RDS(on) = 0.020Ω Description Absolute Maximum Ratings W www.irf.com 1 T op V ie w 8 1 2 3 4 5 6 7 D D D G S A D S S IRF7663 q Trench Technology q Ultra Low On-Resistance q P-Channel MOSFET q Very Small SOIC Package q Low Profile (<1.1mm) q Available in Tape & Reel New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 ™ package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. MICRO8 ™ PD-91866B |
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