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FQP20N06 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FQP20N06 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  ©2001 Fairchild Semiconductor Corporation FQP20N06 Rev. C1 www.fairchildsemi.com 2 Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FQP20N06 FQP20N06 TO-220 Tube N/A N/A 50 units Electrical Characteristics TC = 25°C unless otherwise noted. Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 450 μH, IAS = 20 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 20 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially Independent of Operating Temperature. Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 60 -- -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.07 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 μA VDS = 48 V, TC = 150°C -- -- 10 μA IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 10 A -- 0.048 0.06 Ω gFS Forward Transconductance VDS = 25 V, ID = 10 A -- 12 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 450 590 pF Coss Output Capacitance -- 170 220 pF Crss Reverse Transfer Capacitance -- 25 35 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 30 V, ID = 10 A, RG = 25 Ω (Note 4) -- 5 20 ns tr Turn-On Rise Time -- 45 100 ns td(off) Turn-Off Delay Time -- 20 50 ns tf Turn-Off Fall Time -- 25 60 ns Qg Total Gate Charge VDS = 48 V, ID = 20 A, VGS = 10 V (Note 4) -- 11.5 15 nC Qgs Gate-Source Charge -- 3 -- nC Qgd Gate-Drain Charge -- 4.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 20 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 80 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 20 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 20 A, dIF / dt = 100 A/μs -- 43 -- ns Qrr Reverse Recovery Charge -- 50 -- nC |
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