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BAL99 Datasheet(PDF) 1 Page - General Semiconductor |
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BAL99 Datasheet(HTML) 1 Page - General Semiconductor |
1 / 2 page FEATURES Small Signal Diodes Dimensions in inches and (millimeters) .016 (0.4) .037(0.95) .037(0.95) .122 (3.1) .016 (0.4) .016 (0.4) 3 12 Top View .102 (2.6) .118 (3.0) .094 (2.4) Case: SOT-23 Plastic Package Weight: approx. 0.008 g MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings for a single diode at 25 °C ambient temperature unless otherwise specified. SOT-23 4/98 BAL99, BAV99 BAL99 Marking: JF Symbol Value Unit Reverse Voltage, Peak Reverse Voltage VR, VRM 70 V Forward Current (continuous) IF 250 mA Non-Repetitive Peak Forward Current at t = 1 µs at t = 1 ms at t = 1 s IFSM IFSM IFSM 2 1 0.5 A A A Power Dissipation at Tamb = 25 °C Ptot 3501) mW Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C 1) Device on fiberglass substrate, see layout. Top View 1 3 2 Silicon Epitaxial Planar Diode Fast switching diodes, especially suited for automatic insertion. This diode is also available in other configurations including a dual common cathode with type designation BAV70 and a dual common anode with type designation BAW56. ♦ ♦ BAV99 Marking: JE 1 3 2 Top View ♦ |
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