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BAL99 Datasheet(PDF) 2 Page - General Semiconductor |
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BAL99 Datasheet(HTML) 2 Page - General Semiconductor |
2 / 2 page ELECTRICAL CHARACTERISTICS Ratings for one diode at 25 °C ambient temperature unless otherwise specified BAL99, BAV99 Symbol Min. Typ. Max. Unit Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF VF VF VF – – – – – – – – 0.715 0.855 1.0 1.25 V V V V Leakage Current at VR = 70 V at VR = 70 V, Tj = 150 °C at VR = 25 V, Tj = 150 °C IR IR IR – – – – – – 2.5 100 30 µA µA µA Capacitance at VF = VR = 0; f = 1 MHz Ctot ––1.5 pF Reverse Recovery Time from IF = 10 mA to IR = 10 mA measured at IR = 1 mA, RL = 100 Ω trr ––6 ns Thermal Resistance Junction to Ambient Air RthJA – – 4301) K/W 1) Device on fiberglass substrate, see layout. Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12) |
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