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BAS40-05 Datasheet(PDF) 2 Page - General Semiconductor |
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BAS40-05 Datasheet(HTML) 2 Page - General Semiconductor |
2 / 2 page ELECTRICAL CHARACTERISTICS Ratings for one diode at 25 °C ambient temperature unless otherwise specified BAS40 THRU BAS40-06 Symbol Min. Typ. Max. Unit Reverse Breakdown Voltage Tested with 10 µA Pulses V(BR)R 40 – – V Leakage Current Pulse Test tp < 300 µs at VR = 30 V IR – 20 100 nA Forward Voltage Pulse Test tp < 300 µs at IF = 1 mA at IF = 40 mA VF VF – – – – 380 1000 mV mV Capacitance at VR = 0 V, f = 1 MHz Ctot –4.0 5 pF Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA trr – –5ns Thermal Resistance Junction to Ambient Air RthJA – – 4301) K/W 1) Device on fiberglass substrate, see layout Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12) |
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