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BF820 Datasheet(PDF) 2 Page - General Semiconductor

No. de Pieza. BF820
Descripción  Small Signal Transistors (NPN)
Descarga  2 Pages
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Fabricante  GE [General Semiconductor]
Página de inicio  http://www.vishay.com
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BF820 Datasheet(HTML) 2 Page - General Semiconductor

   
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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
BF820, BF822
Symbol
Min.
Typ.
Max.
Unit
Collector-Base Breakdown Voltage
BF820
at IC = 100 µA, IB = 0
BF822
V(BR)CBO
V(BR)CBO
300
250
V
V
Collector-Emitter Breakdown Voltage
BF822
at IC = 10 mA, IE = 0
V(BR)CEO
250
V
Collector-Emitter Breakdown Voltage
BF820
at RBE = 2.7 kΩ, IC = 10 mA
V(BR)CER
300
––V
Emitter-Base Breakdown Voltage
at IE = 100 µA, IB = 0
V(BR)EBO
5––V
Collector-Base Cutoff Current
at VCB = 200 V, IE = 0
ICBO
––10
nA
Collector-Emitter Cutoff Current
at RBE = 2.7 kΩ, VCE = 250 V
at RBE = 2.7 kΩ, VCE = 200 V, Tj = 150 °C
ICER
ICER
50
10
nA
µA
Collector Saturation Voltage
at IC = 30 mA, IB = 5 mA
VCEsat
––0.6
V
DC Current Gain
at VCE = 20 V, IC = 25 mA
hFE
50
–––
Gain-Bandwidth Product
at VCE = 10 V, IC = 10 mA
fT
60
––MHz
Feedback Capacitance
at VCE = 30 V, IC = 0, f = 1 MHz
Cre
––1.6
pF
Thermal Resistance Junction to Ambient Air
RthJA
4301)
K/W
1) Device on fiberglass substrate, see layout
Layout for RthJA test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
.59 (15)
0.2 (5)
.03 (0.8)
.30 (7.5)
.12 (3)
.04 (1)
.06 (1.5)
.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
Dimensions in inches (millimeters)
.47 (12)


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