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MMBT3904 Datasheet(PDF) 2 Page - General Semiconductor

No. de Pieza. MMBT3904
Descripción  Small Signal Transistors (NPN)
Descarga  3 Pages
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Fabricante  GE [General Semiconductor]
Página de inicio  http://www.vishay.com
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MMBT3904 Datasheet(HTML) 2 Page - General Semiconductor

   
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ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at IC = 10
mA, IE = 0
V(BR)CBO
60
Ð
V
Collector-Emitter Breakdown Voltage
at IC = 1 mA, IB = 0
V(BR)CEO
40
Ð
V
Emitter-Base Breakdown Voltage
at IE = 10
mA, IC = 0
V(BR)EBO
6.0
Ð
V
Collector Saturation Voltage
at IC = 10 mA, IB = 1 mA
VCEsat
Ð
0.2
V
at IC = 50 mA, IB = 5 mA
VCEsat
Ð
0.3
V
Base Saturation Voltage
at IC = 10 mA, IB = 1 mA
VBEsat
Ð
0.85
V
at IC = 50 mA, IB = 5 mA
VBEsat
Ð
0.95
V
Collector-Emitter Cutoff Current
VEB = 3 V, VCE = 30 V
ICEV
Ð50
nA
Emitter-Base Cutoff Current
VEB = 3 V, VCE = 30 V
IEBV
Ð50
nA
DC Current Gain
at VCE = 1 V, IC = 0.1 mA
hFE
40
Ð
Ð
at VCE = 1 V, IC = 1 mA
hFE
70
Ð
Ð
at VCE = 1 V, IC = 10 mA
hFE
100
300
Ð
at VCE = 1 V, IC = 50 mA
hFE
60
Ð
Ð
at VCE = 1 V, IC = 100 mA
hFE
30
Ð
Ð
Input Impedance
at VCE = 10 V, IC = 1 mA, f = 1 kHz
hie
110
k
W
Gain-Bandwidth Product
at VCE = 20 V, IC = 10 mA, f = 100 MHz
fT
300
Ð
MHz
Collector-Base Capacitance
at VCB = 5 V, f = 100 kHz
CCBO
Ð4
pF
Emitter-Base Capacitance
at VEB = 0.5 V, f = 100 kHz
CEBO
Ð8
pF
MMBT3904


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