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ADS8517IBDW Datasheet(PDF) 3 Page - Texas Instruments

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No. de pieza ADS8517IBDW
Descripción Electrónicos  16-Bit, 200-kSPS, Low-Power, Sampling ANALOG-TO-DIGITAL CONVERTER with Internal Reference and Parallel/Serial Interface
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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ADS8517IBDW Datasheet(HTML) 3 Page - Texas Instruments

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ADS8517
www.ti.com ................................................................................................................................................. SLAS527A – SEPTEMBER 2008 – REVISED JUNE 2009
ELECTRICAL CHARACTERISTICS (continued)
At TA = -40°C to +85°C, fS = 200 kHz, VDIG = VANA = 5 V, using internal reference (see Figure 39), unless otherwise noted.
ADS8517I
ADS8517IB(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
THROUGHPUT SPEED
Conversion time
2.5
2.5
µs
Complete cycle
Acquire and convert
5
5
µs
Throughput rate
200
200
kHz
DC ACCURACY
INL
Integral linearity error
–3
3
–1.5
1.5
LSB(2)
DNL
Differential linearity error
–2
3
–1
1.5
LSB
No missing codes
15
16
Bits
Transition noise(3)
0.9
0.8
LSB
Gain error
±0.2
±0.1
%
Internal reference
–0.75
0.75
–0.75
0.75
%
Full-scale error(4)
External 2.5-V reference
–0.75
0.75
–0.75
0.75
%
Internal reference
±9
±9
ppm/°C
Full-scale error drift
External 2.5-V reference
±1
±1
ppm/°C
BPZ
Bipolar zero error
±10 V range
–5
±1
5
–2
±1
2
mV
Bipolar zero error drift
±10 V range
±0.6
±0.6
ppm/°C
UPZ
Unipolar zero error
0 V to 5 V, 0 V to 4 V ranges
–3
±0.1
3
–2
±0.1
2
mV
Unipolar zero error drift
0 V to 5 V, 0 V to 4 V ranges
±0.15
±0.15
ppm/°C
Recovery time to rated accuracy
2.2-
µF capacitor to CAP
1
1
ms
from power down(5)
+4.75 V < VANA < +5.25 V
–8
+8
–6
+6
Power-supply sensitivity
LSB
(VDIG = VANA = VS)
+4.5 V < VANA < +5.5 V
–20
+20
–12
+12
AC ACCURACY
SFDR
Spurious-free dynamic range
fIN = 10 kHz, ±10 V
92
100
96
101
dB(6)
THD
Total harmonic distortion
fIN = 10 kHz, ±10 V
–97
–92
–98
–95
dB
fIN = 10 kHz, ±10 V
85
88
87
88.5
SINAD
Signal-to-(noise+distortion)
dB
–60 dB Input
29
29
SNR
Signal-to-noise ratio
fIN = 10 kHz, ±10 V
85
88
88
89
dB
SNR usable bandwidth(7)
fIN = 10 kHz, ±10 V
130
130
kHz
SNR full-power bandwidth (–3 dB)
fIN = 10 kHz, ±10 V
600
600
kHz
SAMPLING DYNAMICS
Aperture delay
40
40
ns
Aperture jitter
20
20
ps
Transient response
FS step
5
5
µs
Overvoltage recovery(8)
750
750
ns
(2)
LSB means Least Significant Bit. One LSB for the ±10 V input range is 305
µV.
(3)
Typical rms noise at worst-case transitions.
(4)
Full-scale error is the worst case of –Full Scale or +Full Scale untrimmed deviation from ideal first and last code transitions, divided by
the transition voltage (not divided by the full-scale range) and includes the effect of offset error.
(5)
This is the time delay after the ADS8517 is brought out of Power-Down mode until all internal settling occurs and the analog input is
acquired to rated accuracy. A Convert command after this delay will yield accurate results.
(6)
All specifications in dB are referred to a full-scale input.
(7)
Usable bandwidth defined as full-scale input frequency at which Signal-to-(Noise + Distortion) degrades to 60 dB.
(8)
Recovers to specified performance after 2 x FS input overvoltage.
Copyright © 2008–2009, Texas Instruments Incorporated
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