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SD241P Datasheet(PDF) 1 Page - General Semiconductor

No. de pieza SD241P
Descripción Electrónicos  SCHOTTKY RECTIFIER
Download  2 Pages
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Fabricante Electrónico  GE [General Semiconductor]
Página de inicio  http://www.vishay.com
Logo GE - General Semiconductor

SD241P Datasheet(HTML) 1 Page - General Semiconductor

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SD241P
SCHOTTKY RECTIFIER
Reverse Voltage - 45 Volts
Forward Current - 30.0 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
♦ Dual rectifier construction, positive center-tap
♦ Metal silicon junction, majority carrier
conduction
♦ Low power loss,
high efficiency
♦ High current capability,
low forward voltage drop
♦ High surge capability
♦ For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
♦ Guardring for overvoltage protection
♦ High temperature soldering guaranteed:
250°C, 0.17" (4.3mm) from case for 10 seconds
MECHANICAL DATA
Case: JEDEC TO-247AD molded plastic body
Terminals: Lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in. - lbs. max.
Weight: 0.2 ounce, 5.6 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
SD241P
UNITS
Maximum repetitive peak reverse voltage at TC=25°C
VRRM
45
Volts
Maximum blocking voltage at TC=25°C
VDC
45
Volts
Maximum working peak reverse voltage
VRWM
35
Volts
Maximum average forward rectified current
at TC=105°C
I(AV)
30.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
400.0
Amps
Peak repetitive reverse surge current (NOTE 1)
IRSM
2.0
Amps
Maximum instantaneous forward voltage
IF=10A, TC=125°C
0.47
per leg at (NOTE 2)
IF=20A, TC=125°C
VF
0.60
Volts
Maximum instantaneous reverse current
reverse voltage per leg at VR=35V (NOTE 2)
TC=25°C
1.0
TC=125°C
IR
100.0
mA
Voltage rate of change at VR=35V
dv/dt
10,000
V/
µs
Maximum thermal resistance (NOTE 3)
R
ΘJC
1.4
°C
Operating junction temperature range
TJ
-65 to +150
°C
Storage temperature range
TSTG
-65 to +175
°C
NOTES:
(1) 2.0
µs pulse width, f=1.0 KHZ
(2) Pulse test: 300
µs pulse width, 1% duty cycle
(3) Thermal resistance from junction of case per leg
4/98
PIN 1
PIN 3
CASE
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.142 (3.6)
0.138 (3.5)
0.170
(4.3)
0.086 (2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
0.048 (1.22)
0.044 (1.12)
0.795 (20.2)
0.775 (19.6)
0.840 (21.3)
0.820 (20.8)
1
2
3
0.078 REF
(1.98)
0.203 (5.16)
0.193 (4.90)
10
o TYP.
BOTH SIDES
30o
10
o
1
o
REF.
0.118 (3.0)
0.108 (2.7)
0.030 (0.76)
0.020 (0.51)
BOTH SIDES
PIN 2
TO-247AD
Dimensions in inches and (millimeters)


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