2SC5658-HF datasheet(1/5 Pages) INFINEON | General Purpose Transistor

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QW-JTR07

Page 1

REV: A

Symbol

Parameter

Conditions

Min

Max

Unit

Electrical Characteristics (at TA=25°C unless otherwise noted)

Collector-Base breakdown voltage

0.1

IC =50μA , IE=0

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-Emitter saturation voltage

Transition frequency

IC =1mA , IB=0

IE =50μA , IC=0

VCB=60V , IE=0

VEB=7V , IC=0

VCE=6V , IC=1mA

IC=50mA , IB=5mA

VCE=12V , IC=2mA

f=100MHZ

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat)

0.1

120

0.4

µA

MHZ

Output capacitance

Cob

VCB=12V , IE=0

f=1MHZ

3.5

560

Typ

180

Comchip

S M D D i o d e S p e c i a l i s t

General Purpose Transistor

Features

-Low Cob.

Symbol

Parameter

Value

Unit

Absolute Maximum Ratings (at TA=25°C )

Collector-Base voltage

150

Collector-Emitter voltage

Emitter-Base voltage

Collector dissipation

Collector current- continuous

Junction temperature

VCBO

VCEO

VEBO

100

150

µA

Storage temperature

TSTG

-55 ~ +150

µA

2SC5658-HF (NPN)

RoHS Device

Rank

Range

120~270

180~390

270~560

Dimensions in inches and (millimeter)

SOT-723

0.049(1.25)

0.045(1.15)

0.011(0.270)

0.007(0.170)

0.015(0.370)

0.011(0.270)

0.033(0.850)

0.030(0.750)

0.006(0.15)

Max.

0.006(0.15)

Max.

0.002(0.050)

Max.

0.020(0.50)

Max.

Mechanical data

-Case: SOT-723, molded plastic.

-Terminals: solderable per MIL-STD-750,

method 2026.

Circuit diagram

-1.BASE

-2.EMITTER

-3.COLLECTOR

0.031(0.800)

Typ.

0.049(1.250)

0.045(1.150)

Halogen Free

Company reserves the right to improve product design , functions and reliability without notice.

Comchip Technology CO., LTD.

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