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2SC5658-HF Datasheet(PDF) 1 Page - Infineon Technologies AG |
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2SC5658-HF Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 5 page ![]() QW-JTR07 Page 1 REV: A Symbol Parameter Conditions Min Max Unit Electrical Characteristics (at TA=25°C unless otherwise noted) Collector-Base breakdown voltage 0.1 IC =50μA , IE=0 Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency IC =1mA , IB=0 IE =50μA , IC=0 VCB=60V , IE=0 VEB=7V , IC=0 VCE=6V , IC=1mA IC=50mA , IB=5mA VCE=12V , IC=2mA f=100MHZ V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT 50 60 7 0.1 120 0.4 V V V µA µA V MHZ Output capacitance Cob VCB=12V , IE=0 f=1MHZ pF 3.5 560 Typ 180 Comchip S M D D i o d e S p e c i a l i s t General Purpose Transistor Features -Low Cob. Symbol Parameter Value Unit Absolute Maximum Ratings (at TA=25°C ) Collector-Base voltage 150 Collector-Emitter voltage Emitter-Base voltage Collector dissipation Collector current- continuous Junction temperature VCBO VCEO VEBO IC PC TJ 50 60 7 100 150 V V V mA µA µA Storage temperature TSTG -55 ~ +150 µA 2SC5658-HF (NPN) RoHS Device R Rank Q S Range 120~270 180~390 270~560 Dimensions in inches and (millimeter) SOT-723 0.049(1.25) 0.045(1.15) 0.011(0.270) 0.007(0.170) 0.015(0.370) 0.011(0.270) 0.033(0.850) 0.030(0.750) 0.006(0.15) Max. 0.006(0.15) Max. 0.002(0.050) Max. 0.020(0.50) Max. 1 2 3 Mechanical data -Case: SOT-723, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. Circuit diagram 3 1 2 -1.BASE -2.EMITTER -3.COLLECTOR 0.031(0.800) Typ. 0.049(1.250) 0.045(1.150) Halogen Free Company reserves the right to improve product design , functions and reliability without notice. Comchip Technology CO., LTD. |
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