STF32NM50N datasheet(4/21 Pages) STMICROELECTRONICS

No. de pieza	STF32NM50N

Descripción Electrónicos	N-channel 500 V, 0.1 廓 typ., 22 A MDmesh??II Power MOSFET in D짼PAK, TO-220FP, TO-220, TO-247 packages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N

4/21

Doc ID 023436 Rev 1

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Value

Unit

Min.

Typ.

Max.

V(BR)DSS

Drain-source

breakdown voltage

(VGS = 0)

ID = 1 mA

500

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 500 V

VDS = 500 V, TC = 125 °C

1

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 11 A

0.1

0.13

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

-

1973

179

9.7

-

pF

Coss eq.

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 400 V

-

325

-

pF

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD =250 V, ID = 11 A

RG =4.7 Ω, VGS = 10 V

(see Figure 23),

(see Figure 18)

-

21.5

9.5

110

23.6

-

ns

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 400 V, ID = 22 A,

VGS = 10 V,

(see Figure 19)

-

62.5

8.6

33

-

nC

Rg

Gate input resistance

f=1MHz Gate DC Bias=0

Test signal level=20 mV

Open drain

-3.8

-

Ω

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