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2SJ451 Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SJ451 Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 8 page 2SJ451 4 –1.0 –0.8 –0.6 –0.4 –0.2 0 –2 –4 –6 –8 –10 I = –0.2 A D –0.1 A –0.05 A Pulse Test Gate to Source Voltage V (V) GS Drain to Source Saturation Voltage vs. Gate to Source Voltage 100 20 50 10 2 1 5 –0.01–0.02 –0.05 –0.1 –0.2 –0.5 –1 V = –2.5 V GS –4 V Pulse Test Drain Current I (A) D Static Drain to Source on State Resistance vs. Drain Current 10 8 6 4 2 –40 0 40 80 120 160 0 V = –2.5 V GS I = –0.05 A D –4 V –0.2 A –0.05, –0.1 A –0.1 A Pulse Test Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature –0.01 –0.03 –0.1 –0.3 –1 –3 –10 2 1 0.2 0.5 0.1 0.02 0.05 0.01 0.002 0.005 25 °C Tc = –25 °C 75 °C V = –10 V DS Pulse Test Drain Current I (A) D Forward Transfer Admittance vs. Drain Current |
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