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2SJ484 Datasheet(PDF) 5 Page - Hitachi Semiconductor |
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2SJ484 Datasheet(HTML) 5 Page - Hitachi Semiconductor |
5 / 9 page 2SJ484 5 –1.0 –0.8 –0.6 –0.4 –0.2 0 –4 –8 –12 –16 –20 2 1 0.1 0.5 –0.1 –0.2 –0.5 –1 –2 –5 –10 0.5 0.4 0.3 0.2 0.1 –40 0 40 80 120 160 0 0.1 0.05 5 2 1 0.5 0.2 –0.01–0.02 –0.2 –0.5 –1 –2 –5 I = –2 A D –1 A –0.5 A –20 0.2 V = –4 V GS –10 V –0.5, –1.0 A V = –10 V GS –0.1 –0.05 25 °C Tc = –25 °C 75 °C Gate to Source Voltage V (V) GS Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current I (A) D Static Drain to Source on State Resistance vs. Drain Current Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature Drain Current I (A) D Forward Transfer Admittance vs. Drain Current Pulse Test Pulse Test Pulse Test V = –10 V Pulse Test DS I = –2 A D |
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