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2SJ527S Datasheet(PDF) 3 Page - Hitachi Semiconductor |
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2SJ527S Datasheet(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page 2SJ527(L),2SJ527(S) 3 Main Characteristics 40 30 20 10 0 50 100 150 200 –0.1 –0.3 –1 –3 –10 –30 –100 –100 –20 –10 –2 –1 –0.2 –0.1 0 –2 –4 –6 –8 –10 –5 –4 –3 –2 –1 0 –1 –2 –3 –4 –5 Ta = 25 °C 100 µ s Case Temperature Tc ( °C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS Maximum Safe Operation Area Drain to Source Voltage V (V) DS Typical Output Characteristics Gate to Source Voltage V (V) GS Typical Transfer Characteristics Operation in this area is limited by R DS(on) 10 µ s –10 V V = –2.5 V GS –4 V –3 V –3.5 V Pulse Test Tc = 75 °C 25 °C –25 °C V = –10 V Pulse Test DS –0.5 –5 –50 DC Operation (Tc=25 °C) PW = 10 ms (1 shot) –6 V –8 V –5 –4 –3 –2 –1 –5 V |
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