2SJ527S datasheet(3/9 Pages) HITACHI

No. de pieza	2SJ527S

Descripción Electrónicos	Silicon P Channel MOS FET High Speed Power Switching

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Fabricante Electrónico	HITACHI [Hitachi Semiconductor]

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2SJ527(L),2SJ527(S)

3

Main Characteristics

40

30

20

10

0

50

100

150

200

–0.1 –0.3

–1

–3

–10

–30

–100

–20

–10

–2

–1

–0.2

–0.1

0

–2

–4

–6

–8

–10

–5

–4

–3

–2

–1

0

–1

–2

–3

–4

–5

Ta = 25

°C

100

µ

s

Case Temperature

Tc (

°C)

Power vs. Temperature Derating

Drain to Source Voltage

V

(V)

DS

Maximum Safe Operation Area

Drain to Source Voltage

V

(V)

DS

Typical Output Characteristics

Gate to Source Voltage

V

(V)

GS

Typical Transfer Characteristics

Operation in

this area is

limited by R DS(on)

10

µ

s

–10 V

V

= –2.5 V

GS

–4 V

–3 V

–3.5 V

Pulse Test

Tc = 75

°C

25

°C

–25

°C

V

= –10 V

Pulse Test

DS

–0.5

–5

–50

DC

Operation

(Tc=25

°C)

PW

=

10

ms

(1

shot)

–6 V

–8 V

–5

–4

–3

–2

–1

–5 V

Número de pieza similar - 2SJ527S

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Renesas Technology Corp	2SJ527S	93Kb / 9P	Silicon P Channel MOS FET
Guangdong Kexin Industr...	2SJ527S	45Kb / 1P	Hight Speed Power Switching
Renesas Technology Corp	2SJ527STL-E	93Kb / 9P	Silicon P Channel MOS FET
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Descripción similar - 2SJ527S

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2SJ527S Datasheet(PDF) 3 Page - Hitachi Semiconductor

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Número de pieza similar - 2SJ527S

Descripción similar - 2SJ527S

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