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2SJ535 Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SJ535 Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 9 page 2SJ535 4 –5 –4 –3 –2 –1 0 –4 –8 –12 –16 –20 0.1 0.08 0.06 0.04 0.02 –40 0 40 80 120 160 0 1 0.5 0.05 0.02 0.01 –1 –3 –10 –30 –100 –300 –1000 –20 A 0.2 0.1 V = –4 V GS –10,–20A Pulse Test Pulse Test Pulse Test I = –50 A D GS V = –10 V –50 A –20 A –10 V –10 A GS V = –4 V –10 A –0.1 –1 –10 –100 –0.3 –3 –30 100 10 0.1 1 0.3 3 30 25 °C 75 °C V = –10 V DS Pulse Test Gate to Source Voltage V (V) GS Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current I (A) D Static Drain to Source on State Resistance vs. Drain Current Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Drain Current I (A) D Forward Transfer Admittance vs. Drain Current Tc = –25 °C I = –50 A D |
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