2SK1541S datasheet(3/6 Pages) HITACHI

No. de pieza	2SK1541S

Descripción Electrónicos	Silicon N-Channel MOS FET

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Fabricante Electrónico	HITACHI [Hitachi Semiconductor]

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2SK1540(L)(S), 2SK1541(L)(S)

3

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Drain to source

2SK1540 V

(BR)DSS

450

—

V

I

D = 10 mA, VGS = 0

breakdown voltage

2SK1541

500

Gate to source breakdown

voltage

V

(BR)GSS

±30

——V

I

G = ±100 µA, VDS = 0

Gate to source leak current

I

GSS

——

±10

µAV

GS = ±25 V, VDS = 0

Zero gate voltage

2SK1540 I

DSS

—

250

µAV

DS = 360 V, VGS = 0

drain current

2SK1541

V

DS = 400 V, VGS = 0

Gate to source cutoff voltage

V

GS(off)

2.0

—

3.0

V

I

D = 1 mA, VDS = 10 V

Static Drain to source 2SK1540 R

DS(on)

—

0.6

0.8

Ω

I

D = 4 A, VGS = 10 V *

1

on state resistance

2SK1541

—

0.7

0.9

Forward transfer admittance

|yfs|

4.0

6.5

—

S

I

D = 4 A, VDS = 10 V *

1

Input capacitance

Ciss

—

1050

—

pF

V

DS = 10 V, VGS = 0,

Output capacitance

Coss

—

280

—

pF

f = 1 MHz

Reverse transfer capacitance

Crss

—

40

—

pF

Turn-on delay time

t

d(on)

—

15

—

ns

I

D = 4 A, VGS = 10 V,

Rise time

t

r

—

55

—

ns

R

L = 7.5 Ω

Turn-off delay time

t

d(off)

—95

—

ns

Fall time

t

f

—40

—

ns

Body to drain diode forward

voltage

V

DF

—

0.95

—

V

I

F = 7 A, VGS = 0

Body to drain diode reverse

recovery time

t

rr

—

320

—

ns

I

F = 7 A, VGS = 0,

di

F/dt = 100 A/µs

Note

1. Pulse test

See characteristic curves of 2SK1157, 2SK1158.

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2SK1541S Datasheet(PDF) 3 Page - Hitachi Semiconductor

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