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2SK3076L Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SK3076L Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 9 page 2SK3076(L),2SK3076(S) 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage V DSS 500 V Gate to source voltage V GSS ±30 V Drain current I D 7A Drain peak current I D(pulse) Note1 28 A Body-drain diode reverse drain current I DR 7A Channel dissipation Pch Note2 60 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 500 — — V I D = 10mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±30 ——V I G = ±100µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±25V, VDS = 0 Zero gate voltege drain current I DSS — — 250 µAV DS = 400 V, VGS = 0 Gate to source cutoff voltage V GS(off) 2.0 — 3.0 V I D = 1m A, VDS = 10V Static drain to source on state R DS(on) — 0.7 0.9 Ω I D = 4A, VGS = 10V Note4 resistance Forward transfer admittance |y fs| 3.5 6.0 — S I D = 4A, VDS = 10V Note4 Input capacitance Ciss — 1100 — pF V DS = 10V Output capacitance Coss — 310 — pF V GS = 0 Reverse transfer capacitance Crss — 50 — pF f = 1MHz Turn-on delay time t d(on) — 15 — ns I D =4A, VGS = 10V Rise time t r — 55 — ns R L = 7.5 Ω Turn-off delay time t d(off) — 100 — ns Fall time t f —48 — ns Body–drain diode forward voltage V DF — 0.9 — V I F = 7A, VGS = 0 Body–drain diode reverse recovery time t rr — 120 — ns I F = 7A, VGS = 0 diF/ dt =100A/ µs Note: 4. Pulse test |
Número de pieza similar - 2SK3076L |
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Descripción similar - 2SK3076L |
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