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2N7002KG8 Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD.

No. de pieza 2N7002KG8
Descripción Electrónicos  Advanced trench MOSFET process technology
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Fabricante Electrónico  SILIKRON [Silikron Semiconductor Co.,LTD.]
Página de inicio  http://www.silikron.com
Logo SILIKRON - Silikron Semiconductor Co.,LTD.

2N7002KG8 Datasheet(HTML) 1 Page - Silikron Semiconductor Co.,LTD.

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2N7002KG8
©Silikron Semiconductor CO., LTD.
2011.07.17
Version: 1.1
page 1 of 6
www.silikron.com
Main Product Characteristics:
Features and Benefits:
Description:
Absolute max Rating:
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
0.115
A
IDM
0.8
A
Maximum Power Dissipation
PD
0.38
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
328
℃/W
VDSS
60V
RDS(on)
7.5ohm(max.)
ID
A
SOT-363
Schematic diagram
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications


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