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TP0610T-G Datasheet(PDF) 2 Page - Supertex, Inc

No. de Pieza. TP0610T-G
Descripción  P-Channel Enhancement Mode Vertical DMOS FETs
Descarga  5 Pages
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Fabricante  SUTEX [Supertex, Inc]
Página de inicio  http://www.supertex.com
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TP0610T-G Datasheet(HTML) 2 Page - Supertex, Inc

   
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2
TP0610T
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
Thermal Characteristics
Package
I
D
(continuous)
(mA)
I
D
(pulsed)
(mA)
Power Dissipation
@ T
A = 25
O
C
(W)
θ
jc
O
C/W
θ
ja
O
C/W
I
DR
(mA)
I
DRM
(mA)
TO-236AB (SOT-23)
-120
-400
0.36
200
350
-120
-400
† I
D (continuous) is limited by max rated Tj .
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
Pulse
Generator
V
DD
R
L
Output
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
f
t
r
INPUT
INPUT
OUTPUT
0V
VDD
R
GEN
0V
-10V
Sym
Parameter
Min
Typ
Max
Units
Conditions
Electrical Characteristics (T
A = 25°C unless otherwise specified)
BV
DSS
Drain-to-source breakdown voltage
-60
-
-
V
V
GS = 0V, ID = -10μA
V
GS(th)
Gate threshold voltage
-1.0
-
-2.4
V
V
GS = VDS, ID= -1.0mA
∆V
GS(th)
Change in V
GS(th) with temperature
-
-
6.5
mV/OC
V
GS = VDS, ID= -1.0mA
I
GSS
Gate body leakage
-
-
±10
nA
V
GS = ± 20V, VDS = 0V
I
DSS
Zero gate voltage drain current
-
-
-1.0
μA
V
GS = 0V, VDS = Max Rating
-
-200
V
DS = 0.8 Max Rating,
V
GS = 0V, TA = 125°C
I
D(ON)
On-state drain current
-50
-
-
mA
V
GS = -4.5V, VDS = -10V
R
DS(ON)
Static drain-to-source on-state resistance
-
-
25
Ω
V
GS = -4.5V, ID = -25mA
-
10
V
GS = -10V, ID = -200mA
∆R
DS(ON)
Change in R
DS(ON) with temperature
-
-
1.0
%/OC
V
GS = -10V, ID = -200mA
G
FS
Forward transconductance
60
-
-
mmho
V
DS = -10V, ID = -100mA
C
ISS
Input capacitance
-
-
60
pF
V
GS = 0V,
V
DS = -25V,
f = 1.0 MHz
C
OSS
Common source output capacitance
-
-
30
C
RSS
Reverse transfer capacitance
-
-
10
t
d(ON)
Turn-on delay time
-
-
10
ns
V
DD = -25V,
I
D = -180mA,
R
GEN = 25Ω
t
r
Rise time
-
-
15
t
d(OFF)
Turn-off delay time
-
-
15
t
f
Fall time
-
-
20
V
SD
Diode forward voltage drop
-
-
-2.0
V
V
GS = 0V, ISD = -120mA
t
rr
Reverse recovery time
-
400
-
ns
V
GS = 0V, ISD = -400mA
Notes:
1.
All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.
All A.C. parameters sample tested.


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