Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
HN58V65A Datasheet(PDF) 20 Page - Hitachi Semiconductor |
|
HN58V65A Datasheet(HTML) 20 Page - Hitachi Semiconductor |
20 / 27 page HN58V65A Series, HN58V66A Series WE, CE Pin Operation During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE. Write/Erase Endurance and Data Retention Time The endurance is 10 5 cycles in case of the page programming and 104 cycles in case of the byte programming (1% cumulative failure rate). The data retention time is more than 10 years when a device is page-programmed less than 10 4 cycles. Data Protection 1. Data Protection against Noise on Control Pins ( CE, OE, WE) during Operation During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width is 15 ns or less. Be careful not to allow noise of a width of more than 15 ns on the control pins. WE CE OE V 0 V V 0 V 15 ns max IH IH |
Número de pieza similar - HN58V65A |
|
Descripción similar - HN58V65A |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |