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STP45N10F7 Datasheet(PDF) 5 Page - STMicroelectronics |
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STP45N10F7 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 19 page DocID024455 Rev 1 5/19 STD45N10F7, STI45N10F7, STP45N10F7 Electrical characteristics 19 Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 45 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 180 A VSD (2) 2. Pulsed: pulse duration=300 µs, duty cycle 1.5%. Forward on voltage ISD = 45 A, VGS = 0 - 1.1 V trr Reverse recovery time ISD = 45 A, di/dt = 100 A/µs, VDD = 80 V, Tj = 150 °C -53 ns Qrr Reverse recovery charge - 67 nC IRRM Reverse recovery current - 2.5 A |
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