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IRF6665PBF Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRF6665PBF
Descripción Electrónicos  Latest MOSFET Silicon technology
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF6665PBF Datasheet(HTML) 2 Page - International Rectifier

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IRF6665PbF
2
www.irf.com
S
D
G
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.89mH, RG = 25Ω, IAS = 5.0A.
ƒ Surface mounted on 1 in. square Cu board.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS.
† Used double sided cooling , mounting pad.
‡ Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
ˆ TC measured with thermal couple mounted to top
(Drain) of part.
‰ Rθ is measured at TJ of approximately 90°C.
Š Based on testing done using a typical device & evaluation board
at Vbus=±45V, fSW=400KHz, and TA=25°C. The delta case
temperature
TC is 55°C.
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.12
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
53
62
m
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
RG(int)
Internal Gate Resistance
–––
1.9
2.9
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
gfs
Forward Transconductance
6.6
–––
–––
S
Qg
Total Gate Charge
–––
8.4
13
VDS = 50V
Qgs1
Pre-Vth Gate-to-Source Charge
–––
2.2
–––
VGS = 10V
Qgs2
Post-Vth Gate-to-Source Charge
–––
0.64
–––
ID = 5.0A
Qgd
Gate-to-Drain Charge
–––
2.8
–––
nC
See Fig. 6 and 17
Qgodr
Gate Charge Overdrive
–––
2.8
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
3.4
–––
td(on)
Turn-On Delay Time
–––
7.4
–––
tr
Rise Time
–––
2.8
–––
td(off)
Turn-Off Delay Time
–––
14
–––
ns
tf
Fall Time
–––
4.3
–––
Ciss
Input Capacitance
–––
530
–––
Coss
Output Capacitance
–––
110
–––
Crss
Reverse Transfer Capacitance
–––
29
–––
pF
Coss
Output Capacitance
–––
510
–––
Coss
Output Capacitance
–––
67
–––
Coss eff.
Effective Output Capacitance
–––
130
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
Ù
A
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
IS
Continuous Source Current
–––
–––
38
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
34
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
31
–––
ns
Qrr
Reverse Recovery Charge
–––
37
–––
nC
Typ.
–––
–––
Conditions
VDS = 10V, ID = 5.0A
Conditions
VGS = 10V f
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
11
5.0
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 5.0A, VGS = 0V f
TJ = 25°C, IF = 5.0A, VDD = 25V
di/dt = 100A/µs
f
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 5.0A f
VDS = VGS, ID = 250µA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
VGS = 20V
Max.
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V g
VDD = 50V
ID = 5.0A
RG = 6.0Ω
VGS = -20V


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