IRF840S_14 datasheet(4/4 Pages) A-POWER

No. de pieza	IRF840S

Descripción Electrónicos	Fast Switching Characteristic

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Fabricante Electrónico	A-POWER [Advanced Power Electronics Corp.]

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IRF840S

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

4

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

t

T

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.1

1

10

100

1

10

100

1000

V DS , Drain-to-Source Voltage (V)

T c =25

o C

Single Pulse

100us

1ms

10ms

100ms

DC

0

2

4

6

8

10

12

0

102030405060

Q G , Total Gate Charge (nC)

I D =8A

V DS =100V

V DS =250V

V DS =400V

0

400

800

1200

1600

2000

2400

1

5

9

1317

2125

29

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

td(on) tr

td(off) tf

VDS

VGS

10%

90%

Q

VG

10V

QGS

QGD

QG

Charge

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IRF840S Datasheet(PDF) 4 Page - Advanced Power Electronics Corp.

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