2SA1215 datasheet(2/4 Pages) JMNIC

No. de pieza	2SA1215

Descripción Electrónicos	Silicon PNP Power Transistors

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Fabricante Electrónico	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

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Product Specification

2

Silicon PNP Power Transistors

2SA1215

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO

Collector-emitter breakdown voltage

IC=-25mA ; IB=0

-160

V

VCEsat

Collector-emitter saturation voltage

IC=-5A ;IB=-0.5A

-2.0

V

ICBO

Collector cut-off current

VCB=-160V; IE=0

-100

μA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-100

μA

hFE

DC current gain

IC=-5A ; VCE=-4V

50

180

Cob

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

400

pF

fT

Transition frequency

IC=-2A ; VCE=-12V

50

MHz

Switching times

ton

Turn-on time

0.25

μs

ts

Storage time

0.85

μs

tf

Fall time

IC=-5A;RL=12Ω

IB1=-IB2=-0.5A

VCC=-60V

0.20

μs

hFE classifications

O

P

Y

50-100

70-140

90-180

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