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1N1186 Datasheet(Hoja de datos) 1 Page - GeneSiC Semiconductor, Inc.

No. de Pieza. 1N1186
Descripción  Silicon Standard Recovery Diode
Descarga  3 Pages
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Fabricante  GENESIC [GeneSiC Semiconductor, Inc.]
Página de inicio  http://www.genesicsemi.com/
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VRRM = 50 V - 300 V
IF = 35 A
Features
• High Surge Capability
DO-5 Package
• Types from 50 to 300 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
1N1183 (R) 1N1184 (R)
Unit
Repetitive peak reverse voltage
VRRM
50
100
V
RMS reverse voltage
VRMS
35
70
V
DC blocking voltage
VDC
50
100
V
Silicon Standard
Recovery Diode
Conditions
300
210
300
200
1N1183 thru 1N1187R
1N1187 (R)
200
140
1N1186 (R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified
2. Reverse polarity (R): Stud is anode.
DC blocking voltage
VDC
50
100
V
Continuous forward current
IF
35
35
A
Operating temperature
Tj
-55 to 150 -55 to 150
°C
Storage temperature
Tstg
-55 to 150 -55 to 150
°C
Parameter
Symbol
1N1183 (R) 1N1184 (R)
Unit
Diode forward voltage
1.2
1.2
10
10
μA
10
10
mA
Thermal characteristics
Thermal resistance, junction -
case
RthJC
0.25
0.25
°C/W
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-55 to 150
-55 to 150
TC = 25 °C, tp = 8.3 ms
300
200
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
1N1186 (R)
0.25
VR = 50 V, Tj = 140 °C
0.25
1.2
1.2
10
VR = 50 V, Tj = 25 °C
IF = 35 A, Tj = 25 °C
TC ≤ 140 °C
Conditions
595
595
-55 to 150
35
35
10
A
595
Reverse current
IR
VF
595
-55 to 150
1N1187 (R)
10
10
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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