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BF862_2015 Datasheet(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF862_2015 Datasheet(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
4 / 12 page 2000 Jan 05 4 Philips Semiconductors Product specification N-channel junction FET BF862 STATIC CHARACTERISTICS Tj =25 °C; unless otherwise specified. DYNAMIC CHARACTERISTICS Common source; Tamb =25 °C; VGS = 0; VDS = 8 V; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)GSS gate-source breakdown voltage IGS = −1 µA; VDS =0 −20 −− V VGS gate-source forward voltage VDS = 0; IG =1mA −− 1V VGSoff gate-source cut-off voltage VDS =8V; ID =1 µA −0.3 −0.8 −1.2 V IGSS reverse gate current VGS = −15 V; VDS =0 −−−1nA IDSS drain-source current VGS = 0; VDS =8V 10 − 25 mA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs common source forward transfer admittance Tj =25 °C35 45 − mS gos common source output conductance Tj =25 °C − 180 400 µS Ciss input capacitance f = 1 MHz − 10 − pF Crss reverse transfer capacitance f = 1 MHz − 1.9 − pF en equivalent noise input voltage f = 100 kHz − 0.8 − nV/ √Hz fT transition frequency − 715 − MHz |
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