BF1100WR_2015 datasheet(7/14 Pages) JMNIC

No. de pieza	BF1100WR_2015

Descripción Electrónicos	Dual-gate MOS-FET

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Fabricante Electrónico	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

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7 / 14 page

1995 Apr 25

7

Philips Semiconductors

Product speciﬁcation

Dual-gate MOS-FET

BF1100WR

Fig.10 Drain current as a function of gate 1 current;

typical values.

VDS = 9 to 12 V.

VG2-S =4V.

Tj =25 °C.

handbook, halfpage

020

40

80

60

16

12

4

0

8

MLD163

I

(

µA)

G1

I D

(mA)

Fig.11 Drain current as a function of gate 1 supply

voltage (= VGG) and drain supply voltage;

typical values; see Fig.26.

VG2-S =4V.

RG1 connected to VGG.

Tj =25 °C.

handbook, halfpage

0

20

15

10

5

0

48

16

MLD164

12

V

= V

(V)

GG

DS

I D

(mA)

R

= 100 k

Ω

G1

147 k

Ω

180 k

Ω

205 k

Ω

249 k

Ω

301 k

Ω

402 k

Ω

511 k

Ω

Fig.12 Drain current as a function of gate 1 voltage

(= VGG); typical values; see Fig.26.

VDS = 9 V; VG2-S =4V.

RG1 = 180 kΩ (connected to VGG); Tj =25 °C.

handbook, halfpage

02

4

10

8

6

12

4

0

8

MLD165

V

(V)

GG

I D

(mA)

VDS = 12 V; VG2-S =4V.

RG1 = 250 kΩ (connected to VGG); Tj =25 °C.

Fig.13 Drain current as a function of gate 1 voltage

(= VGG); typical values; see Fig.26.

handbook, halfpage

04

8

12

4

0

8

MLD166

V

(V)

GG

I D

(mA)

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BF1100WR_2015 Datasheet(PDF) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd.

BF1100WR_2015 Datasheet(HTML) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Número de pieza similar - BF1100WR_2015

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