FQD17N08L datasheet(4/8 Pages) FAIRCHILD

No. de pieza	FQD17N08L

Descripción Electrónicos	N-Channel QFET MOSFET 80 V, 12.9 A, 100 m

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Fabricante Electrónico	FAIRCHILD [Fairchild Semiconductor]

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FQD17N08L Rev. C1

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4

Typical Characteristics (Continued)

10

-5

10

-4

10

-3

10

-2

10

1

-

10

0

10

1

10

-1

10

0

※

N o te s :

1 . Z

θ JC( t ) = 3. 13 ℃ / W

M ax .

2 . D u ty F a c to r , D = t

1 /t 2

3 . T

JM - T C = P DM * Z θ JC(t )

s in gle puls e

D= 0 .5

0.02

0.2

0.05

0.1

0.0 1

25

50

75

100

125

150

0

3

6

9

12

15

T

C, Case Temperature [℃]

10

0

10

1

10

2

10

-1

10

0

10

1

10

2

DC

10 ms

1 ms

100 μs

Operation in This Area

is Limited by R

DS(on)

※

Notes :

1. T

C = 25

oC

2. T

J = 150

oC

3. Single Pulse

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※

Notes :

1. V

GS = 10 V

2. I

D = 6.45 A

T

J, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

※

Notes :

1. V

GS = 0 V

2. I

D = 250 μ A

T

J, Junction Temperature [

oC]

V

DS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

t

1 , S q uar e W av e P ul s e D ur at i on [ s ec ]

Figure 11. Transient Thermal Response Curve

t1

PDM

t2

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FQD17N08L Datasheet(PDF) 4 Page - Fairchild Semiconductor

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