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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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GMS81C2112 Datasheet(PDF) 92 Page - Hynix Semiconductor |
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GMS81C2112 Datasheet(HTML) 92 Page - Hynix Semiconductor |
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GMS81C2112/GMS81C2120 86 JUNE. 2001 Ver 1.00 Figure 21-4 Timing Diagram in READ Mode Parameter Symbol MIN TYP MAX Unit Programming Supply Current IVPP -- 50 mA Supply Current in EPROM Mode IVDDP -- 20 mA VPP Level during Programming VIHP 11.5 12.0 12.5 V VDD Level in Program Mode VDD1H 56 6.5 V VDD Level in Read Mode VDD2H -2.7 - V CTL3~0 High Level in EPROM Mode VIHC 0.8VDD -- V CTL3~0 Low Level in EPROM Mode VILC -- 0.2VDD V A_D7~A_D0 High Level in EPROM Mode VIHAD 0.9VDD -- V A_D7~A_D0 Low Level in EPROM Mode VILAD -- 0.1VDD V VDD Saturation Time TVDDS 1- - mS VPP Setup Time TVPPR -- 1 mS VPP Saturation Time TVPPS 1- - mS EPROM Enable Setup Time after Data Input TSET1 200 nS EPROM Enable Hold Time after TSET1 THLD1 500 nS Table 21-2 AC/DC Requirements for Program/Read Mode VPP CTL0/1 High 8bit HA LA DATA LA DATA DATA EPROM Enable CTL2 CTL3 A_D7~ VDD VDD2H 0V 0V 0V Address Input Low 8bit Address Input DATA A_D0 TVDDS TVPPR TVPPS VDD2H VDD2H VIHP THLD1 THLD2 TSET1 TDLY1 TDLY2 TCD1 TCD2 TCD2 TCD1 HA LA Output Low 8bit Address Input High 8bit Address Input Low 8bit Address Input DATA Output DATA Output After input a high address, output data following low address input Anothe high address step |
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