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BUL56B_2015 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

No. de pieza BUL56B_2015
Descripción Electrónicos  Silicon Power Transistors
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Fabricante Electrónico  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Página de inicio  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

BUL56B_2015 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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Product Specification
www.jmnic.com
JMnic
Silicon Power Transistors
BUL56B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=10mA ;IB=0
100
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
250
V
V(BR)EBO
Emitter-base breakdwon voltage
IE=1mA ;IC=0
10
V
VCEsat-1
Collector-emitter saturation voltage
IC=1A IB=0.1A
0.2
V
VCEsat-2
Collector-emitter saturation voltage
IC=7A IB=0.7A
0.6
V
VCEsat-3
Collector-emitter saturation voltage
IC=12A IB=1.2A
1.2
V
VBEsat-1
Emitter-base saturation voltage
IC=7A IB=0.7A
1.2
V
VBEsat-2
Emitter-base saturation voltage
IC=12A IB=1.2A
1.8
V
ICBO
Collector cut-off current
VCB=250V IE=0
TC=125℃
10
100
μA
ICEO
Collector cut-off current
VCE=90V IB=0
100
μA
IEBO
Emitter cut-off current
VEB=9V IC=0
TC=125℃
10
100
μA
hFE-1
DC current gain
IC=0.3A ; VCE=5V
30
90
hFE-2
DC current gain
IC=5A ; VCE=5V
25
60
hFE-3
DC current gain
IC=12A ; VCE=1V
5
fT
Transition frequency
IC=0.2A ; VCE=4V
20
MHz
Cob
Output capacitance
VCB=100V ;f=1MHz
100
pF


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