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STB18NF30 Datasheet(PDF) 7 Page - STMicroelectronics |
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STB18NF30 Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 15 page DocID018590 Rev 3 7/15 STB18NF30 Electrical characteristics 15 Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics VGS 6 4 2 0 0 10 Qg(nC) (V) 40 8 20 30 10 VDD=264V ID=18A 50 12 150 100 50 0 200 250 VDS VDS (V) AM12978v1 C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 100 Ciss Coss Crss 1000 AM12979v1 VGS(th) 0.6 0.4 0.2 0 -100 0 TJ(°C) (norm) -50 0.8 50 100 150 1.2 1.0 1.4 1.6 1.8 ID=250µA AM12980v1 RDS(on) 2.0 1.5 1.0 0.5 -100 0 TJ(°C) (norm) -50 50 100 150 2.5 0 VGS=10V ID=9A AM12981v1 VSD 0 10 ISD(A) (V) 5 15 0 0.2 0.4 0.6 0.8 1.0 TJ=25°C TJ=175°C TJ=-50°C AM12982v1 |
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