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1N4005S Datasheet(PDF) 1 Page - Goodwork Semiconductor Co., Ltd . |
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1N4005S Datasheet(HTML) 1 Page - Goodwork Semiconductor Co., Ltd . |
1 / 2 page 1.0 AMP SILICON RECTIFIERS MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating 25 C ambient temperature uniess otherwies specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. TYPE NUMBER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375"(9.5mm) Lead Length at Ta=75 C FEATURES MECHANICAL DATA Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at 1.0A Maximum DC Reverse Current Ta=25 C at Rated DC Blocking Voltage Ta=100 C Typical Junction Capacitance (Note 1) 1N4001S 1N4002S 1N4003S 1N4004S 1N4005S 1N4006S 1N4007S UNITS 50 100 200 400 600 800 1000 V 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 1.0 30 5.0 50 15 -65 +150 V A V pF NOTES: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length. * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Lead: Axial leads, solderable per MIL-STD-202, method 208 guranteed * Polarity: Color band denotes cathode end * Mounting position: Any 1N4001S THRU 1N4007S 1.0 Typical Thermal Resistance R JA (Note 2) 50 A-405 Dimensions in inches and (millimeters) VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere * Low forward voltage drop * Low leakage current * High reliability * High current capability 1.0(25.4) MIN. 1.0(25.4) MIN. .205(5.2) .166(4.2) .025(.6) .021(.5) DIA. .107(2.7) .080(2.0) DIA. A Operating and Storage Temperature Range TJ, TSTG C C/W A A 202 |
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