FCH041N60E datasheet(2/9 Pages) FAIRCHILD

No. de pieza	FCH041N60E

Descripción Electrónicos	N-Channel SuperFET짰 II Easy-Drive MOSFET

Download	9 Pages

Scroll/Zoom	100%

Fabricante Electrónico	FAIRCHILD [Fairchild Semiconductor]

Página de inicio	http://www.fairchildsemi.com

Logo

2 / 9 page

FCH041N60E Rev. C1

www.fairchildsemi.com

2

Package Marking and Ordering Information

Electrical Characteristics T

C = 25

oC unless otherwise noted.

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Part Number

Top Mark

Package

Packing Method

Reel Size

Tape Width

Quantity

FCH041N60E

TO-247

Tube

N/A

30 units

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain to Source Breakdown Voltage

ID = 10 mA, VGS = 0 V, TC = 25oC600

-

V

ID = 10 mA, VGS = 0 V, TC = 150oC650

-

ΔBVDSS

/

ΔTJ

Breakdown Voltage Temperature

Coefficient

ID = 10 mA, Referenced to 25oC

-

0.67

-

V/oC

IDSS

Zero Gate Voltage Drain Current

VDS = 480 V, VGS = 0 V

-

1

μA

VDS = 480 V, VGS = 0 V, TC = 125oC-

-

10

IGSS

Gate to Body Leakage Current

VGS = ±20 V, VDS = 0 V

-

±100

nA

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 250 μA

2.5

-

3.5

V

RDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 39 A

-

36

41

m

Ω

gFS

Forward Transconductance

VDS = 20 V, ID = 39 A

-

71

-

S

Ciss

Input Capacitance

VDS = 100 V, VGS = 0 V,

f = 1 MHz

-

10300

13700

pF

Coss

Output Capacitance

-

355

475

pF

Crss

Reverse Transfer Capacitance

-

4

6

pF

Coss

Output Capacitance

VDS = 380 V, VGS = 0 V, f = 1 MHz

-

187

-

pF

Cosseff.

Effective Output Capacitance

VDS = 0 V to 480 V, VGS = 0 V

-

735

-

pF

Qg(tot)

Total Gate Charge at 10V

VDS = 380 V, ID = 39 A,

VGS = 10 V

(Note 4)

-

285

380

nC

Qgs

Gate to Source Gate Charge

-

45

-

nC

Qgd

Gate to Drain “Miller” Charge

-

105

-

nC

ESR

Equivalent Series Resistance

f = 1 MHz

-

1.2

-

Ω

td(on)

Turn-On Delay Time

VDD = 380 V, ID = 39 A,

VGS = 10 V, RG = 4.7 Ω

(Note 4)

-

50

110

ns

tr

Turn-On Rise Time

-

50

110

ns

td(off)

Turn-Off Delay Time

-

320

650

ns

tf

Turn-Off Fall Time

-

85

180

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

77

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

231

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0 V, ISD = 39 A

-

1.2

V

trr

Reverse Recovery Time

VGS = 0 V, ISD = 39 A,

dIF/dt = 100 A/μs

-

590

-

ns

Qrr

Reverse Recovery Charge

-

18

-

μC

Notes:

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. IAS = 15 A, RG = 25 Ω, starting TJ = 25°C.

3. ISD ≤ 39 A, di/dt ≤ 200 A/μs, VDD ≤ 380V, starting TJ = 25°C.

4. Essentially independent of operating temperature.

Número de pieza similar - FCH041N60E

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Inchange Semiconductor ...	FCH041N60E	372Kb / 2P	isc N-Channel MOSFET Transistor

More results

Descripción similar - FCH041N60E

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Fairchild Semiconductor	FCPF600N60Z	337Kb / 10P	N-Channel SuperFET짰 II MOSFET
	FCP170N60	817Kb / 9P	N-Channel SuperFET짰 II MOSFET
	FCP190N60_GF102	663Kb / 9P	N-Channel SuperFET짰 II MOSFET
	FCH104N60	771Kb / 9P	N-Channel SuperFET짰 II MOSFET
	FCH130N60	620Kb / 9P	N-Channel SuperFET짰 II MOSFET
	FCH170N60	624Kb / 9P	N-Channel SuperFET짰 II MOSFET
	FCP104N60	803Kb / 9P	N-Channel SuperFET짰 II MOSFET
	FCP110N65F	709Kb / 9P	N-Channel SuperFET짰 II FRFET짰 MOSFET
	FCH077N65F	1Mb / 9P	N-Channel SuperFET짰 II FRFET짰 MOSFET
	FCH104N60F	579Kb / 9P	N-Channel SuperFET짰 II FRFET짰 MOSFET

More results

FCH041N60E Datasheet(PDF) 2 Page - Fairchild Semiconductor

FCH041N60E Datasheet(HTML) 2 Page - Fairchild Semiconductor

Número de pieza similar - FCH041N60E

Descripción similar - FCH041N60E

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Descarga

Enlace URL