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FCH104N60 Datasheet(PDF) 4 Page - Fairchild Semiconductor

No. de pieza FCH104N60
Descripción Electrónicos  N-Channel SuperFET짰 II MOSFET
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FCH104N60 Datasheet(HTML) 4 Page - Fairchild Semiconductor

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©2014 Fairchild Semiconductor Corporation
FCH104N60 Rev. C0
Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Eoss vs. Drain to Source Voltage
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
*Notes:
1. VGS = 0V
2. ID = 10mA
TJ, Junction Temperature [
oC]
-100
-50
0
50
100
150
200
0.5
1.0
1.5
2.0
2.5
*Notes:
1. VGS = 10V
2. ID = 18.5A
TJ, Junction Temperature [
oC]
25
50
75
100
125
150
0
10
20
30
40
TC, Case Temperature [
oC]
1
10
100
1000
0.01
0.1
1
10
100
300
10μs
100μs
1ms
10ms
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25
oC
2. TJ = 150
oC
3. Single Pulse
DC
0
120
240
360
480
600
0
4
8
12
16
20
V
DS, Drain to Source Voltage [V]


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