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AD1674 Datasheet(PDF) 6 Page - Analog Devices

No. de Pieza. AD1674
Descripción  12-Bit 100 kSPS A/D Converter
Descarga  12 Pages
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Fabricante  AD [Analog Devices]
Página de inicio  http://www.analog.com
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AD1674 Datasheet(HTML) 6 Page - Analog Devices

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AD1674
REV. C
–6–
ORDERING GUIDE
INL
S/(N+D)
Package
Package
Model1
Temperature Range
(TMIN to TMAX)(TMIN to TMAX)
Description
Option2
AD1674JN
0
°C to +70°C
±1 LSB
69 dB
Plastic DIP
N-28
AD1674KN
0
°C to +70°C
±1/2 LSB
70 dB
Plastic DIP
N-28
AD1674JR
0
°C to +70°C
±1 LSB
69 dB
Plastic SOIC
R-28
AD1674KR
0
°C to +70°C
±1/2 LSB
70 dB
Plastic SOIC
R-28
AD1674AR
–40
°C to +85°C
±1 LSB
69 dB
Plastic SOIC
R-28
AD1674BR
–40
°C to +85°C
±1/2 LSB
70 dB
Plastic SOIC
R-28
AD1674AD
–40
°C to +85°C
±1 LSB
69 dB
Ceramic DIP
D-28
AD1674BD
–40
°C to +85°C
±1/2 LSB
70 dB
Ceramic DIP
D-28
AD1674TD
–55
°C to +125°C
±1 LSB
70 dB
Ceramic DIP
D-28
NOTES
1For details on grade and package offerings screened in accordance with MIL-STD-883, refer to the Analog Devices Military Products Databook or current
AD1674/883B data sheet. SMD is also available.
2N = Plastic DIP; D = Hermetic Ceramic DIP; R = Plastic SOIC.
TIMING—STAND-ALONE MODE (Figures 4a and 4b)
J, K, A, B Grades
T Grade
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Units
Data Access Time
tDDR
150
150
ns
Low R/C Pulse Width
tHRL
50
50
ns
STS Delay from R/C
tDS
200
225
ns
Data Valid After R/C Low
tHDR
25
25
ns
STS Delay After Data Valid
tHS
0.6
0.8
1.2
0.6
0.8
1.2
µs
High R/C Pulse Width
tHRH
150
150
ns
NOTE
All min and max specifications are guaranteed.
Specifications subject to change without notice.
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD1674 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
DATA
VALID
DATA VALID
HIGH-Z
STS
DB11 – DB0
R/C
_
t
HRL
t
DS
t
C
t
HS
t
HDR
Figure 4a. Stand-Alone Mode Timing Low Pulse for R/C
DATA
VALID
HIGH-Z
HIGH-Z
STS
DB11 – DB0
R/C
_
t
HRH
t
DS
t
C
t
DDR
t
HDR
t
HL
Figure 4b. Stand-Alone Mode Timing High Pulse for R/C
ABSOLUTE MAXIMUM RATINGS*
VCC to Digital Common . . . . . . . . . . . . . . . . . . . 0 to + 16.5 V
VEE to Digital Common . . . . . . . . . . . . . . . . . . . . . 0 to –16.5 V
VLOGIC to Digital Common . . . . . . . . . . . . . . . . . . 0 V to +7 V
Analog Common to Digital Common . . . . . . . . . . . . . . .
±1 V
Digital Inputs to Digital Common . . . –0.5 V to VLOGIC +0.5 V
Analog Inputs to Analog Common . . . . . . . . . . . . VEE to VCC
20 VIN to Analog Common . . . . . . . . . . . . . . . . . VEE to +24 V
REF OUT . . . . . . . . . . . . . . . . . Indefinite Short to Common
. . . . . . . . . . . . . . . . . . . . . . . . . . . Momentary Short to VCC
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +175
°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW
Lead Temperature, Soldering (10 sec) . . . . . . . +300
°C, 10 sec
Storage Temperature . . . . . . . . . . . . . . . . . . . –65
°C to +150°C
*Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.


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