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28F200BX-TB Datasheet(PDF) 4 Page - Intel Corporation |
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28F200BX-TB Datasheet(HTML) 4 Page - Intel Corporation |
4 / 48 page 28F200BX-TB 28F002BX-TB The Status Register (SR) indicates the status of the WSM and whether the WSM successfully completed the desired program or erase operation Maximum Access Time of 60 ns (tACC) is achieved over the commercial temperature range (0 Cto 70 C) 5% VCC supply voltage range (475V to 525V) and 30 pF output load Refer to Figure 19 tACC vs Output Load Capacitance for larger output loads Maximum Access Time of 80 ns (tACC) is achieved over the commercial temperature range 10% VCC supply range (45V to 55V) and 100 pF output load IPP maximum Program current is 40 mA for x16 operation and 30 mA for x8 operation IPP Erase current is 30 mA maximum VPP erase and pro- gramming voltage is 114V to 126V (VPP e 12V g 5%) under all operating conditions As an op- tion VPP can also vary between 108V to 132V (VPP e 12V g10%) with a guaranteed number of 100 block erase cycles Typical ICC Active Current of 25 mA is achieved for the x16 products (28F200BX) typical ICC Active Current of 20 mA is achieved for the x8 products (28F200BX 28F002BX) Refer to the ICC active cur- rent derating curves in this datasheet The 2-Mbit boot block flash family is also designed with an Automatic Power Savings (APS) feature to minimize system battery current drain and allow for very low power designs Once the device is ac- cessed to read array data APS mode will immedi- ately put the memory in static mode of operation where ICC active current is typically 1 mA until the next read is initiated When the CE and RP pins are at VCC and the BYTE pin (28F200BX-only) is at either VCC or GND the CMOS Standby mode is enabled where ICC is typically 50 mA A Deep Power-Down Mode is enabled when the RP pin is at ground minimizing power consumption and providing write protection during power-up con- ditions ICC current during deep power-down mode is 020 mA typical An initial maximum access time or Reset Time of 300 ns is required from RP switching until outputs are valid Equivalently the device has a maximum wake-up time of 215 ns until writes to the Command User Interface are recog- nized When RP is at ground the WSM is reset the Status Register is cleared and the entire device is protected from being written to This feature pre- vents data corruption and protects the code stored in the device during system reset The system Reset pin can be tied to RP to reset the memory to nor- mal read mode upon activation of the Reset pin With on-chip programerase automation in the 2-Mbit family and the RP functionality for data pro- tection when the CPU is reset and even if a program or erase command is issued the device will not rec- ognize any operation until RP returns to its normal state For the 28F200BX Byte-wide or Word-wide In- putOutput Control is possible by controlling the BYTE pin When the BYTE pin is at a logic low the device is in the byte-wide mode (x8) and data is read and written through DQ 07 During the byte- wide mode DQ 814 are tri-stated and DQ15Ab1 becomes the lowest order address pin When the BYTE pin is at a logic high the device is in the word-wide mode (x16) and data is read and written through DQ 015 13 Applications The 2-Mbit boot block flash family combines high density high performance cost-effective flash mem- ories with blocking and hardware protection capabili- ties Its flexibility and versatility will reduce costs throughout the product life cycle Flash memory is ideal for Just-In-Time production flow reducing sys- tem inventory and costs and eliminating component handling during the production phase During the product life cycle when code updates or feature en- hancements become necessary flash memory will reduce the update costs by allowing either a user- performed code change via floppy disk or a remote code change via a serial link The 2-Mbit boot block flash family provides full function blocked flash memories suitable for a wide range of applications These applications include Extended PC BIOS Digital Cellular Phone program and data storage Telecommunication bootfirmware and various other embedded applications where both program and data storage are required Reprogrammable systems such as personal com- puters are ideal applications for the 2-Mbit flash products Portable and handheld personal computer applications are becoming more complex with the addition of power management software to take ad- vantage of the latest microprocessor technology the availability of ROM-based application software pen tablet code for electronic hand writing and diag- nostic code Figure 1 shows an example of a 28F200BX-T application This increase in software sophistication augments the probability that a code update will be required after the PC is shipped The 2-Mbit flash products provide an inexpensive update solution for the note- book and handheld personal computers while ex- tending their product lifetime Furthermore the 2-Mbit flash products’ power-down mode provides added flexibility for these battery-operated portable designs which require operation at very low power levels 4 |
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