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BC817 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BC817 Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 19 page BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 7 of 19 NXP Semiconductors BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig 4. Selection -16: Base-emitter saturation voltage as a function of collector current; typical values Fig 5. Selection -25: Base-emitter saturation voltage as a function of collector current; typical values IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig 6. Selection -40: Base-emitter saturation voltage as a function of collector current; typical values 006aaa134 IC (mA) 10−1 103 102 110 1 10 VBEsat (V) 10−1 (1) (2) (3) 006aaa135 IC (mA) 10−1 103 102 110 1 10 VBEsat (V) 10−1 (1) (2) (3) 006aaa136 IC (mA) 10−1 103 102 110 1 10 VBEsat (V) 10−1 (1) (2) (3) |
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