2SA1369-H datasheet(1/3 Pages) KEXIN

No. de pieza	2SA1369-H

Descripción Electrónicos	PNP Transistors

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Fabricante Electrónico	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

Transistors

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1

Features

High Collector Current (ICM = -3A, IC = -1.5A)

High Collector Dissipation PC = 500mW

Small Package For Mounting

Complementary to 2SC3439

Absolute Maximum Ratings Ta = 25

ti

n

U

g

n

it

a

R

l

o

b

m

y

S

r

e

t

e

m

a

r

a

P

V

e

g

a

tl

o

V

e

s

a

B

-r

o

t

c

e

ll

o

C

CBO

-30

V

e

g

a

tl

o

V

r

e

tt

i

m

E

-r

o

t

c

e

ll

o

C

CEO

-20

V

e

g

a

tl

o

V

e

s

a

B

-r

e

tt

i

m

E

EBO

-6

V

I

t

n

e

rr

u

C

r

o

t

c

e

ll

o

C

-1.5

A

I

t

n

e

rr

u

C

r

o

t

c

e

ll

o

C

k

a

e

P

CM

-3

A

P

n

o

it

a

p

i

s

i

D

r

e

w

o

P

r

o

t

c

e

ll

o

C

500

mW

T

e

r

u

t

a

r

e

p

m

e

t

n

o

it

c

m

u

J

j

+150

T

e

g

n

a

R

e

r

u

t

a

r

e

p

m

e

t

e

g

a

r

o

t

S

stg

-55 to +150

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

PNP Transistors

2SA1369

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-30

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA，RBE=∞

-20

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-6

Collector-base cut-off current

ICBO

VCB= -20 V , IE=0

-0.1

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-0.1

Collector-emitter saturation voltage

VCE(sat) IC=-1A, IB=- 20mA

-0.25 -0.5

Base - emitter saturation voltage

VBE(sat) IC=-1A, IB=- 20mA

-1.2

DC current gain

hFE

VCE= -6V, IC= -500mA

400

1200

Collector Output Capacitance

Cob

VCE= -10V, IE= 0,f=1MHz

37

pF

Transition frequency

fT

VCE= -10V, IE= 10mA

90

MHz

V

uA

V

■

Classification of hfe

Type

2SA1369-G

2SA1369-H

Range

400-800

600-1200

Marking

GG

GH

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2SA1369-H Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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