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AMP04EPZ Datasheet(PDF) 5 Page - Analog Devices |
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AMP04EPZ Datasheet(HTML) 5 Page - Analog Devices |
5 / 16 page AMP04 REV. B –5– Parameter Symbol Conditions Limit Unit G = 1000 80 dB min Power Supply Rejection PSRR 4.0 V ≤ VS ≤ 12 V G = 1 85 dB min G = 10 95 dB min G = 100 95 dB min G = 1000 95 dB min GAIN (G = 100 K/RGAIN) Gain Equation Accuracy G = 1 to 100 0.75 % max OUTPUT Output Voltage Swing High VOH RL = 2 k Ω 4.0 V min Output Voltage Swing Low VOL RL = 2 k Ω 2.5 mV max POWER SUPPLY Supply Current ISY VS = ±15 900 µA max 700 µA max NOTE Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing. ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V Common-Mode Input Voltage 2 . . . . . . . . . . . . . . . . . . . ±18 V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 36 V Output Short-Circuit Duration to GND . . . . . . . . . . Indefinite Storage Temperature Range Z Package . . . . . . . . . . . . . . . . . . . . . . . . . . –65 °C to +175°C P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65 °C to +150°C Operating Temperature Range AMP04A . . . . . . . . . . . . . . . . . . . . . . . . . . –55 °C to +125°C AMP04E, F . . . . . . . . . . . . . . . . . . . . . . . . . –40 °C to +85°C Junction Temperature Range Z Package . . . . . . . . . . . . . . . . . . . . . . . . . . –65 °C to +175°C P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65 °C to +150°C Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300 °C Package Type JA 3 JC Unit 8-Lead Cerdip (Z) 148 16 °C/W 8-Lead Plastic DIP (P) 103 43 °C/W 8-Lead SOIC (S) 158 43 °C/W NOTES 1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted. 2For supply voltages less than ± 18 V, the absolute maximum input voltage is equal to the supply voltage. 3 θ JA is specified for the worst case conditions, i.e., θ JA is specified for device in socket for cerdip, P-DIP, and LCC packages; θ JA is specified for device soldered in circuit board for SOIC package. ORDERING GUIDE Temperature VOS @ 5 V Package Package Model Range TA = 25 C Description Option AMP04EP XIND 150 µV Plastic DIP N-8 AMP04ES XIND 150 µV SOIC SO-8 AMP04ES-REEL7 XIND 150 µV SOIC SO-8 AMP04FP XIND 300 µV Plastic DIP N-8 AMP04FS XIND 300 µV SOIC SO-8 AMP04FS-REEL XIND 150 µV SOIC SO-8 AMP04FS-REEL7 XIND 150 µV SOIC SO-8 AMP04GBC 25 °C 300 µV DICE CHARACTERISTICS RGAIN 1 RGAIN 8 7 V+ 6 VOUT 5 REF –IN 2 +IN 3 V– 4 AMP04 Die Size 0.075 × 0.99 inch, 7,425 sq. mils. Substrate (Die Backside) Is Connected to V+. Transistor Count, 81. |
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