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2SA1035 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1035 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type IC www.kexin.com.cn 1 SMD Type Transistors Features Absolute Maximum Ratings Ta = 25 ti n U g n it a R l o b m y S r e t e m a r a P V e g a tl o v e s a b -r o t c e ll o C CBO -55 V V e g a tl o v r e tt i m e -r o t c e ll o C CEO -55 V V e g a tl o v e s a b -r e tt i m E EBO -5 V I t n e rr u c r o t c e ll o C C -50 mA I t n e rr u c r o t c e ll o c k a e P CP -100 mA P n o it a p i s s i d r e w o p r o t c e ll o C C 200 mW T e r u t a r e p m e t n o it c n u J j 150 T e r u t a r e p m e t e g a r o t S stg -55 to +150 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1.Base 2.Emitter 3.collector 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01 PNP Transistors 2SA1035 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA, IE=0 -55 Collector- emitter breakdown voltage VCEO Ic= -2 mA, IB=0 -55 Emitter - base breakdown voltage VEBO IE= -100μA, IC=0 -5 Collector-base cut-off current ICBO VCB= -50 V , IE=0 -100 nA Collector- emittercut-off current ICEO VCE= -40 V , IB=0 -1 uA Emitter cut-off current IEBO VEB= -5V , IC=0 -100 nA Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=-10mA -0.6 Base - emitter saturation voltage VBE(sat) IC=-100 mA, IB=-10mA -1.2 Base - emitter voltage VBE VBE=-1V, IC=-100mA -1.0 DC current gain hFE VCE= -5V, IC= -2mA 180 700 Noise voltage NV VCE = –10V, IC = –1mA, GV = 80dB Rg = 100kΩ , Function = FLAT 150 mV Transition frequency fT VCB= -5V, IE= -2mA,f=200MHz 200 MHz V V ● Low noise voltage NV. ● High foward current transfer ratio hFE. ● Complementary to 2SC2406. ■ Classification of hfe Type 2SA1035-R 2SA1035-S 2SA1035-T Range 180-360 260-520 360-700 Marking HR HS HT |
Número de pieza similar - 2SA1035_15 |
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Descripción similar - 2SA1035_15 |
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