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BCW61C Datasheet(Hoja de datos) 2 Page - Guangdong Kexin Industrial Co.,Ltd

No. de Pieza. BCW61C
Descripción  PNP Transistors
Descarga  2 Pages
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Fabricante  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de inicio  http://www.kexin.com.cn/index.asp
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SMD Type
www.kexin.com.cn
2
Transistors
PNP Transistors
BCW61 (KCW61)
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-32
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA, IB=0
-32
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-5
Collector-base cut-off current
ICBO
VCB= -32 V , IE=0
-20
Emitter cut-off current
IEBO
VEB= -4V , IC=0
-20
IC=-10 mA, IB=-0.25mA
-60
-250
IC=-50 mA, IB=-1.25mA
-120
-550
IC=-10 mA, IB=-0.25mA
-0.6
-0.85
IC=-50 mA, IB=-1.25mA
-0.68
-1.05
Base - emitter voltage
VBE
VCE= -5V, IC= -2mA
-0.6
-0.75
DC current gain
BCW61B
30
BCW61C
40
BCW61D
100
DC current gain
BCW61A
120
220
BCW61B
180
310
BCW61C
250
460
BCW61D
380
630
DC current gain
BCW61A
60
BCW61B
80
BCW61C
100
BCW61D
110
Collector output capacitance
Cob
VCB= -10V,IE=0, f=1MHz
4.5
Collector input capacitance
Cib
VEB= -0.5V,IC=0, f=1MHz
11
Transition frequency
fT
VCE= -5V, IC= -10mA,f=100MHz
100
MHz
Collector-emitter saturation voltage
VCE(sat)
Base - emitter saturation voltage
VBE(sat)
hFE(1)
hFE(2)
VCE= -5V, IC= -10uA
VCE= -5V, IC= -2mA
V
nA
mV
V
hFE(3)
VCE= -1V, IC= -50mA
pF
Classification of hfe(2)
Type
BCW61A
BCW61B
BCW61C
BCW61D
Range
120-220
180-310
250-460
380-630
Marking
BA
BB
BC
BD




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