Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

Complimentary to SS8550

Marking :

Y1

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

40

V

Collector-Emitter Voltage

V

CEO

25

V

Emitter-Base Voltage

V

EBO

5

V

Collector Current -Continuous

I

C

1500

mA

Collector Power Dissipation

300

mW

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC= 100μA, IE=0

40

V

Collector-emitter breakdown voltage

VCEO

IC= 0.1mA, IB=0

25

V

Emitter-base breakdown voltage

VEBO

IE=100μA, IC=0

5

V

Collector cut-off current

ICB

O

VCB=40V, IE=0

0.1

μA

Collector cut-off current

ICEO

VCB=20V, IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB= 5V, IC=0

0.1

μA

DC current gain

hFE(1)

VCE=1V, IC= 100mA

120

400

hFE(2)

VCE=1V, IC= 800mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=800mA, IB= 80mA

0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=800mA, IB= 80mA

1.2

V

Transition frequency

fT

VCE=10V, IC= 50mA

f=30MHz

100

MHz

CLASSIFICATION OF

Rank

L

H

J

Range

120-200

200-350

300-400

(NPN)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

SS8050

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/