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2SA1419-R Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No. de pieza 2SA1419-R
Descripción Electrónicos  PNP Transistors
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Fabricante Electrónico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de inicio  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SA1419-R Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
Transistors
www.kexin.com.cn
1
Features
Adoption of FBET, MBIT Processes
High Breakdown Voltage and Large Current Capacity
Electrical Characteristics Ta = 25
PNP Transistors
2SA1419
1.Base
2.Collector
3.Emitter
1.70 0.1
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-180
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA, RBE=∞
-160
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-6
Collector-base cut-off current
ICBO
VCB= -120 V , IE=0
-1
Emitter cut-off current
IEBO
VEB= -4V , IC=0
-1
Collector-emitter saturation voltage
VCE(sat) IC=-500mA, IB=- 25mA
-0.2
-0.5
Base - emitter saturation voltage
VBE(sat) IC=-500mA, IB=- 25mA
-0.85 -1.2
VCE= -5V, IC= -100mA
100
400
VCE= -5V, IC= -10mA
80
Turn-on time
ton
40
Storage time
ts
700
Fall time
tf
40
Output capacitance
Cob
VCB= -10V, IE= 0,f=1MHz
22
pF
Transition frequency
fT
VCE= -10V, IE= -50mA
120
MHz
DC current gain
hFE
See Test Circuit.
V
V
ns
uA
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-180
Collector - Emitter Voltage
VCEO
-160
Emitter - Base Voltage
VEBO
-6
Collector Current - Continuous
IC
-1.5
Collector Current - Pulsed
ICP
-2.5
Collector Power Dissipation
PC
500
mW
Junction Temperature
TJ
150
Storage Temperature range
Tstg
-55 to 150
V
A
Classification of hfe
Complementary to 2SC3649
Type
2SA1419-R
2SA1419-S
2SA1419-T
Range
100-200
140-280
200-400
Marking
AER*
AES*
AET*


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