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SI2304DS Datasheet(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd

No. de pieza SI2304DS
Descripción Electrónicos  N-Channel Enhancement MOSFET
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Fabricante Electrónico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de inicio  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI2304DS Datasheet(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd

  SI2304DS Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd SI2304DS Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd SI2304DS Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd SI2304DS Datasheet HTML 4Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
3
MOSFET
N-Channel Enhancement MOSFET
SI2304DS (KI2304DS)
Typical Characterisitics
0.6
0.8
1.0
1.2
1.4
1.6
1.8
–50
–25
0
25
50
75
100
125
150
Crss
On-Resistance vs. Drain Current
s
c
it
s
ir
e
t
c
a
r
a
h
C
r
e
f
s
n
a
r
T
s
c
it
s
ir
e
t
c
a
r
a
h
C
t
u
p
t
u
O
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
0
2
4
6
8
10
0
2
4
6
8
10
0
2
4
6
8
10
0
1
2
3
4
5
0 V
VGS = 10 V - 5 V
3 V
4 V
0
100
200
300
400
500
0
6
12
18
24
30
0
2
4
6
8
10
0
1
2
3
4
5
0
0.06
0.12
0.18
0.24
0.30
0
2
4
6
8
10
Gate Charge
Qg – Total Gate Charge (nC)
VDS – Drain-to-Source Voltage (V)
Coss
Ciss
VDS = 15 V
ID = 2.5 A
ID – Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 2.5 A
TJ – Junction Temperature ( C)
VGS = 4.5 V
VGS = 10 V
0
TC = 125 C
–55 C
25 C


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