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2N7002K-3 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2N7002K-3 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Gate-Source Voltage -Continuous VGS ±20 Drain Current -Continuous ( Note:1) 300 -Pulsed 800 Power Dissipation (Note 1) PD 350 mW Thermal Resistance.Junction- to-Ambient RthJA 357 ℃ /W Junction Temperature TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 V ℃ ID mA SMD Type MOSFET 1 1.Base 2.Emitter 1 GATE 2 SOURCE 3 DRAIN www.kexin.com.cn Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage 2N7002K Absolute Maximum Ratings Ta=25 Electrical Characteristics Ta = 25 Marking Notes: 1. Device mounted on FR-4 PCB. Note: 2. Short duration test pulse used to minimize self-heating effect. Marking 702. N-Channel Enhancement MOSFET ● ESD Protected 2KV HBM Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage (Note.2) VDSS ID=100μA, VGS=0V 60 V Zero Gate Voltage Drain Current (Note.2) IDSS VDS=60V, VGS=0V 1 μ A Gate-Body Leakage Current (Note.2) IGSS VDS=0V, VGS=±20V ± 10 uA Gate Threshold Voltage (Note.2) VGS(th) VDS=VGS , ID=250μA 1 1.6 2.5 V VGS=10V, ID=500mA 2 VGS=10V, ID=50mA 3 Forward Transfer Admittance (Note.2) | Yfs | VGS=10V, ID=200mA 80 ms Input Capacitance Ciss 50 Output Capacitance Coss 25 Reverse Transfer Capacitance Crss 5 Total Gate Charge Qg VGS=4.5V, VDS=15V, ID=200mA 0.8 nC Turn-On DelayTime td(on) 20 Turn-Off DelayTime td(off) 40 Static Drain-Source On-Resistance (Note.2) RDS(On) Ω pF ns ID=200mA, VDS=30V, RG=10Ω,VGEN=10V,RL=150Ω VGS=0V, VDS=25V, f=1MHz Source Gate Protection Diode Gate D rain 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 1 2 3 Unit: mm SOT-23-3 0.15 +0.02 -0.02 |
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