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MTB030N04N3 Datasheet(PDF) 2 Page - Cystech Electonics Corp.

No. de pieza MTB030N04N3
Descripción Electrónicos  40V N-Channel Enhancement Mode MOSFET
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Fabricante Electrónico  CYSTEKEC [Cystech Electonics Corp.]
Página de inicio  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB030N04N3 Datasheet(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C884N3
Issued Date : 2014.08.20
Revised Date :
Page No. : 2/ 9
MTB030N04N3
CYStek Product Specification
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
±20
Continuous Drain Current @ VGS=10V, TC=25C
ID
8
A
Continuous Drain Current @ VGS=10V, TC=125C
4.6
Continuous Drain Current @ VGS=10V, TA=25C
(Note 3)
IDSM
4.7
Continuous Drain Current @ VGS=10V, TA=70C
(Note 3)
3.8
Pulsed Drain Current (Note 1, 2)
IDM
32
Maximum Power Dissipation
TC=25°C
PD
3
W
TC=125°C
1
TA=25°C
PDSM
1.25
TA=70°C
0.8
Operating Junction and Storage Temperature
Tj, Tstg
-55~+175
C
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance, Junction-to-Ambient , max
(Note 3)
RθJA
100
C/W
Thermal Resistance, Junction-to-Case , max
RθJC
50
Note: 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤300μs, duty cycle≤2%
3. Surface mounted on 1 in²copper pad of FR-4 board at steady state; 417C/W when mounted on minimum copper
pad.
4. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
5. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value
in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may
be used if the PCB allows it.
Electrical Characteristics (Tj=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
40
-
-
V
VGS=0V, ID=250μA
ΔBVDSS/ΔTj
-
32
-
mV/℃
Reference to 25℃, ID=250μA
VGS(th)
1.0
-
2.5
V
VDS=VGS, ID=250μA
GFS
-
9.1
-
S
VDS=5V, ID=7.9A
IGSS
-
-
±100
nA
VGS=±20V, VDS=0V
IDSS
-
-
1
μA
VDS=40V, VGS=0V
-
-
50
VDS=40V, VGS=0V, Tj=125
C
-
-
150
VDS=40V, VGS=0V, Tj=175
C
*RDS(ON)
-
25.3
34
m
VGS=10V, ID=7.9A
-
-
47
VGS=10V, ID=7.9A, Tj=125
C
-
-
65
VGS=10V, ID=7.9A, Tj=175
C
-
34.2
46
VGS=4.5V, ID=7.3A


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