MTB090N06I3-0-UJ-G datasheet(4/8 Pages) CYSTEKEC

No. de pieza	MTB090N06I3-0-UJ-G

Descripción Electrónicos	N-Channel Enhancement Mode Power MOSFET

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Fabricante Electrónico	CYSTEKEC [Cystech Electonics Corp.]

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4 / 8 page

CYStech Electronics Corp.

Spec. No. : C420I3

Issued Date : 2014.07.11

Revised Date :

Page No. : 4/8

MTB090N06I3

CYStek Product Specification

Typical Characteristics

Typical Output Characteristics

0

2

4

6

8

10

12

14

16

18

20

01

23

456

7

8

9

10

VDS, Drain-Source Voltage(V)

10V,9V,8V,7V,6V,5V

3V

VGS=2.5V

3.5V

4V

Brekdown Voltage vs Ambient Temperature

0.4

0.6

0.8

1

1.2

1.4

-75 -50 -25

0

25

50

75 100 125 150 175

Tj, Junction Temperature(°C)

ID=250μA,

VGS=0V

Static Drain-Source On-State resistance vs Drain Current

10

100

1000

0.001

0.01

0.1

1

10

100

ID, Drain Current(A)

VGS = 3V

4.5V

10V

VGS=2.5V

Reverse Drain Current vs Source-Drain Voltage

0.2

0.4

0.6

0.8

1

1.2

04

8

12

16

20

IDR, Reverse Drain Current(A)

Tj=25°C

Tj=150°C

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

0

40

80

120

160

200

240

02

4

6

8

10

VGS, Gate-Source Voltage(V)

ID=3A

Drain-Source On-State Resistance vs Junction Tempearture

0.4

0.8

1.2

1.6

2

2.4

-75 -50 -25

0

25

50

75 100 125 150 175

Tj, Junction Temperature(°C)

VGS=10V, ID=3A

RDSON@Tj=25°C : 70mΩ typ.

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MTB090N06I3-0-UJ-G Datasheet(PDF) 4 Page - Cystech Electonics Corp.

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