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IRF7476-HF Datasheet(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

No. de pieza IRF7476-HF
Descripción Electrónicos  N-Channel MOSFET
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Fabricante Electrónico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de inicio  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

IRF7476-HF Datasheet(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd

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4
MOSFET
.
Typical Characterisitics
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
0.1
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
= 0 V
GS
T = 150
C
J
°
T = 25
C
J
°
VSD, Source-to-Drain Voltage (V)
0
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
1
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
td(off) tf
Fig 10b. Switching Time Waveforms
VDS
Pulse Width
µs
Duty Factor
RD
VGS
RG
D.U.T.
4.5V
+
-VDD
25
50
75
100
125
150
0
3
6
9
12
15
°
Tc, Case Temperature (°C)
N-Channel MOSFET
IRF7476-HF (KRF7476-HF)


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