SI2314EDS-3 datasheet(4/5 Pages) KEXIN

No. de pieza	SI2314EDS-3

Descripción Electrónicos	N-Channel Enhancement MOSFET

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Fabricante Electrónico	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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MOSFET

.

N-Channel Enhancement MOSFET

SI2314EDS (KI2314EDS)

■

Typical Characterisitics

0.6

0.8

1.0

1.2

1.4

1.6

–50

–25

0

25

50

75

100

125

150

0

2

4

6

8

0

4

8

12

16

20

VDS = 10 V

ID = 5.0 A

VGS = 4.5 V

ID = 5.0 A

Gate Charge

Qg – Total Gate Charge (nC)

On-Resistance vs. Junction Temperature

TJ – Junction Temperature ( C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.00

0.05

0.10

0.15

0.20

0

2

4

6

8

ID = 5.0 A

20

1

0.01

e

g

a

tl

o

V

e

c

r

u

o

S

-

o

t-

e

t

a

G

.

s

v

e

c

n

a

t

s

i

s

e

R

-

n

O

e

g

a

tl

o

V

d

r

a

w

r

o

F

e

d

o

i

D

n

i

a

r

D

-

e

c

r

u

o

S

VSD –

V

)

V

(

e

g

a

tl

o

V

n

i

a

r

D

-

o

t-

e

c

r

u

o

S

GS – Gate-to-Source Voltage (V)

0.1

TJ = 150 C

TJ = 25 C

10

0.01

0

1

10

12

4

6

100

600

0.1

Single Pulse Power

Time (sec)

2

8

–0.4

–0.3

–0.2

–0.1

–0.0

0.1

0.2

–50

–25

0

25

50

75

100

125

150

ID = 250 A

Threshold Voltage

TJ – Temperature ( C)

10

TA = 25 C

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SI2314EDS-3 Datasheet(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

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